Reduction of Be out‐diffusion from heavily doped GaAs:Be layers by pseudomorphic InxGa1−xAs barrier layers
نویسندگان
چکیده
منابع مشابه
Suppression of defect propagation in semiconductors by pseudomorphic layers
The propagation of defects in semiconductor heterostructures has been studied both theoretically and experimentally. The simple model shows that defects originating from lattice-matched regions can be prevented from entering, or can be trapped by, a pseudomorphic layer, depending on the signs of the strain induced by the defect and the strain in the pseudomorphic layer. A pseudomorphic layer ca...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1994
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.112187